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Materials Research Society Symposium - Proceedings

Volumn 762, Issue , 2003, Pages 455-460

Influence of Filament and Substrate Temperatures on Structural and Optoelectronic Properties of Narrow Gap a-SiGe:H Alloys Deposited by Hot-Wire CVD

(5) Xu, Yueqin a Nelson, Brent P a Williamson, D L b Gedvilas, Lynn M a Reedy, Robert C a

a NATIONAL RENEWABLE ENERGY LABORATORY (United States)

b Department of Geology and Geological Engineering (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; CHEMICAL BONDS; CHEMICAL VAPOR DEPOSITION; DEPOSITION; ENERGY GAP; FILM GROWTH; FOURIER TRANSFORM INFRARED SPECTROSCOPY; LIGHT ABSORPTION; PHOTOCONDUCTIVITY; SOLAR CELLS; SUBSTRATES; THERMAL EFFECTS; X RAY SCATTERING;

OPTOELECTRONIC PROPERTIES;

SILICON ALLOYS;

EID: 1642541200 PISSN: 02729172 EISSN: None Source Type: Conference Proceeding
DOI: 10.1557/proc-762-a10.2 Document Type: Conference Paper

Times cited : (9)

References (12)

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