Narrow gap a-SiGe:H grown by hot-wire chemical vapor deposition

Thin Solid Films

Volumn 430, Issue 1-2, 2003, Pages 104-109

  Nelson, Brent P ^a   Xu, Yueqin ^a   Williamson, D L ^b   Han, Daxing ^c   Braunstein, Rubin ^d   Boshta, M ^d   Alavi, B ^d  

^a NATIONAL RENEWABLE ENERGY LABORATORY   (United States)

^b Department of Geology and Geological Engineering   (United States)

^c University of North Carolina at Chapel Hill   (United States)

^d UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

Alloy; Germanium; Hot wire; Silicon

Indexed keywords

PHOTOCONDUCTIVITY; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; X RAY SCATTERING;

HOT WIRE CHEMICAL VAPOR DEPOSITION (HWCVD);

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0038147212     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(03)00085-3     Document Type: Conference Paper

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