Nanostructured Ge distribution in a-SiGe : H alloys from anomalous small-angle X-ray scattering studies

Solid State Communications

Volumn 108, Issue 7, 1998, Pages 419-424

  Goerigk, G ^a,c   Williamson, D L ^b  

^a FORSCHUNGSZENTRUM JÜLICH   (Germany)

^b NSF Engineering Research Center for Reinventing the Nation s Urban Water Infrastructure   (United States)

^c DESY   (Germany)

Author keywords

A. nanostructures; A. semiconductors; B. nanofabrications; D. photoconductivity and photovoltaics; E. synchrotron radiation

Indexed keywords

AMORPHOUS ALLOYS; ANISOTROPY; ION BOMBARDMENT; NANOSTRUCTURED MATERIALS; PHOTOCONDUCTIVITY; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING GERMANIUM COMPOUNDS; SEMICONDUCTOR GROWTH; SILICON ALLOYS; SYNCHROTRON RADIATION; X RAY SCATTERING;

ANOMALOUS SMALL-ANGLE X RAY SCATTERING (ASAXS); SILICON GERMANIUM ALLOYS;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0032182418     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1098(98)00391-3     Document Type: Article

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