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Materials Research Society Symposium - Proceedings

Volumn 798, Issue , 2003, Pages 747-752

Microstructure of nonpolar a-plane GaN grown on (1120) 4H-SiC investigated by TEM

(6) Zakharov, D N a Liliental Weber, Z a Wagner, B b Reitmeier, Z J b Preble, E A b Davis, R F b

a LAWRENCE BERKELEY NATIONAL LABORATORY (United States)

b NORTH CAROLINA STATE UNIVERSITY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRACK INITIATION; CRACK PROPAGATION; CRYSTAL ORIENTATION; ELECTRON BEAMS; ELECTRON DIFFRACTION; GALLIUM NITRIDE; GROWTH (MATERIALS); HIGH RESOLUTION ELECTRON MICROSCOPY; MICROSTRUCTURE; STACKING FAULTS; TRANSMISSION ELECTRON MICROSCOPY;

OPTOELECTRONIC PROPERTIES; QUANTUM WELL STRUCTURES;

SILICON CARBIDE;

EID: 2942696220 PISSN: 02729172 EISSN: None Source Type: Conference Proceeding
DOI: 10.1557/proc-798-y5.28 Document Type: Conference Paper

Times cited : (1)

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