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Physical Review Letters

Volumn 96, Issue 18, 2006, Pages

Interfacial segregation and electrodiffusion of dopants in AlN/GaN superlattices

(3) Boguslawski P a,b Szwacki, N Gonzalez a Bernholc, J b

a INSTITUTE OF PHYSICS (Poland)

b NORTH CAROLINA STATE UNIVERSITY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM NITRIDE; DEFECTS; ELECTRIC FIELD EFFECTS; ELECTROMIGRATION; GALLIUM NITRIDE; HETEROJUNCTIONS; HYDROGEN; INTERFACES (MATERIALS); SEGREGATION (METALLOGRAPHY);

ALN/GAN SUPERLATTICES; CHARGE STATES; INTERFACIAL SEGREGATIONS; POLAR HETEROSTRUCTURES;

SUPERLATTICES;

EID: 33646510535 PISSN: 00319007 EISSN: 10797114 Source Type: Journal
DOI: 10.1103/PhysRevLett.96.185501 Document Type: Article

Times cited : (11)

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