Effects of donor density and temperature on electron systems in AlGaN/AlN/GaN and AlGaN/GaN structures

Chinese Physics

Volumn 15, Issue 5, 2006, Pages 1060-1066

  Zhang, Jin Feng ^a   Wang, Chong ^a   Zhang, Jin Cheng ^a   Hao, Yue ^a  

^a XIDIAN UNIVERSITY   (China)

Author keywords

AlGaN AlN GaN; AlGaN GaN; C V carrier density profile; Two dimensional electron gas

Indexed keywords

ALUMINUM NITRIDE; CARRIER CONCENTRATION; GALLIUM NITRIDE; MOLECULAR STRUCTURE; POISSON EQUATION;

ALGAN/ALN/GAN; ALGAN/GAN; C - V CARRIER DENSITY PROFILE; TWO-DIMENSIONAL ELECTRON GAS;

SEMICONDUCTING ALUMINUM COMPOUNDS;

EID: 33646500121     PISSN: 10091963     EISSN: 17414199     Source Type: Journal    
DOI: 10.1088/1009-1963/15/5/032     Document Type: Article

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