Effect of an AlN spacer layer on AlGaN/GaN HEMTs

Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors

Volumn 26, Issue 12, 2005, Pages 2396-2400

  Zhang, Jincheng ^a   Wang, Chong ^a   Yang, Yan ^a   Zhang, Jinfeng ^a   Feng, Qian ^a   Li, Peixian ^a   Hao, Yue ^a  

^a XIDIAN UNIVERSITY   (China)

Author keywords

AlGaN GaN; AlN spacer layer; HEMT; Two dimensional electron gas

Indexed keywords

ELECTRON GAS; HETEROJUNCTIONS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PERFORMANCE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS;

ALUMINUM NITRIDE SPACER LAYER; TWO-DIMENSIONAL ELECTRON GAS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 32844456287     PISSN: 02534177     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (4)

1. T of over 120 GHz. IEEE Electron Device Lett, 2002, 23(8): 455
2. Wu Y F, Keller B P, Keller S, et al. GaN-based FETs for microwave power amplification. IEICE Trans Electron, 1999, E82-C(11): 1895
3. Shen L, Heikman S, Moran B, et al. AlGaN/AlN/GaN high-power microwave HEMT. IEEE Electron Device Lett, 2001, 22(10): 457
4. + re-growth. 24th International Symposium on Compound Semiconductors, San Diego, 1997