Implanted collector profile optimization in a SiGe HBT process

Solid-State Electronics

Volumn 45, Issue 3, 2001, Pages 399-404

  Malm, Bengt Gunnar ^a   Johansson, Ted ^b   Arnborg, Torkel ^a,b   Norström, Hans ^b   Grahn, Jan V ^a   Östling, Mikael ^a  

^a ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

^b ERICSSON RESEARCH   (Sweden)

Author keywords

Antimony implantation; Device simulation; Johnson limit; Selectively implanted collector (SIC); Silicon Germanium HBT

Indexed keywords

COMPUTER SIMULATION; ELECTRIC BREAKDOWN OF SOLIDS; ION IMPLANTATION; OPTIMIZATION; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DOPING;

JOHNSON LIMIT THEORY; SELECTIVELY IMPLANTED COLLECTORS;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0035277537     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(01)00063-6     Document Type: Article

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