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Volumn 12, Issue 8, 2001, Pages 467-472
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The behavior of Ti silicidation on Si/SiGe/Si base and its effect on base resistance and fmax in SiGe hetero-junction bipolar transistors
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Author keywords
[No Author keywords available]
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Indexed keywords
ANNEALING;
COMPOSITION EFFECTS;
COMPUTER SIMULATION;
CURRENT VOLTAGE CHARACTERISTICS;
DEPOSITION;
SEMICONDUCTING SILICON COMPOUNDS;
SEMICONDUCTOR DEVICE MANUFACTURE;
THERMAL EFFECTS;
THICKNESS MEASUREMENT;
TITANIUM;
ANNEALING TEMPERATURE;
BASE RESISTANCE;
MAXIMUM OSCILLATION FREQUENCY;
SILICIDATION;
HETEROJUNCTION BIPOLAR TRANSISTORS;
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EID: 0035428780
PISSN: 09574522
EISSN: None
Source Type: Journal
DOI: 10.1023/A:1011843517164 Document Type: Article |
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Times cited : (12)
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References (7)
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