Distinct fine and coarse ripples on 4H-SiC single crystal induced by femtosecond laser irradiation

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 45, Issue 12-16, 2006, Pages

  Tomita, Takuro ^a   Kinoshita, Keita ^a   Matsuo, Shigeki ^a   Hashimoto, Shuichi ^a  

^a UNIVERSITY OF TOKUSHIMA   (Japan)

Author keywords

4H SiC; Ablation; Femtosecond laser; Ripple

Indexed keywords

CRYSTAL STRUCTURE; LASER ABLATION; LASER BEAM EFFECTS; MORPHOLOGY; SILICON CARBIDE;

4H-SIC; FEMTOSECOND LASERS; RIPPLES;

SINGLE CRYSTALS;

EID: 33646479360     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.45.L444     Document Type: Article

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