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Volumn 892, Issue , 2006, Pages 239-244

Analysis of the quantum efficiency of GaInN/GaN light emitting diodes in the range of 390 - 580 nm

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENTS; ELECTRIC POTENTIAL; ELECTRON TRANSITIONS; ELECTRONIC STRUCTURE; GALLIUM NITRIDE; QUANTUM EFFICIENCY;

DRIVE CURRENT; ELECTRONIC TRANSPORT; EXTERNAL QUANTUM EFFICIENCY (EQE); FORWARD VOLTAGE;

LIGHT EMITTING DIODES;

EID: 33646431984 PISSN: 02729172 EISSN: None Source Type: Conference Proceeding
DOI: None Document Type: Conference Paper

Times cited : (1)

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