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Journal of Crystal Growth

Volumn 240, Issue 1-2, 2002, Pages 152-156

The structure and photoluminescence of ZnO films prepared by post-thermal annealing zinc-implanted silica

(8) Liu, Y X a Liu, Y C a,b Shen, D Z a Zhong, G Z a Fan, X W a Kong, X G a Mu, R c Henderson, D O c

a CHANGCHUN INSTITUTE OF OPTICS (China)

b NORTHEAST NORMAL UNIVERSITY (China)

c FISK UNIVERSITY (United States)

Author keywords

A1. Photoluminescence; A1. X ray diffraction; B1. Oxides; B1. Zinc compounds

Indexed keywords

CRYSTAL ORIENTATION; FILM PREPARATION; ION IMPLANTATION; PHOTOLUMINESCENCE; RAPID THERMAL ANNEALING; THERMAL EFFECTS; ULTRAVIOLET RADIATION; X RAY DIFFRACTION ANALYSIS; X RAY PHOTOELECTRON SPECTROSCOPY; ZINC OXIDE;

HIGH-QUALITY FILMS;

THIN FILMS;

EID: 0036538673 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(02)00843-6 Document Type: Article

Times cited : (38)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.