Influence of the ex-situ and in-situ annealed self-buffer layer on ZnO film

Physica Status Solidi C: Conferences

Volumn 3, Issue 4, 2006, Pages 1010-1013

  Wang, Jinzhong ^c   Sallet, Vincent ^a   Amiri, Gaëlle ^a   Rommelluere, Jean François ^a   Lusson, Alain ^a   Rzepka, E ^a   Lewis, John E ^b   Galtier, Pierre ^a   Fortunato, Elvira ^c   Martins, Rodrigo ^c   Gorochov, Ouri ^a  

^a Centre National de la Recherche Scientifique   (France)

^b STATE UNIVERSITY OF NEW YORK   (United States)

^c DEPARTAMENTO DE CIÊNCIA DOS MATERIAIS   (Portugal)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; FILM GROWTH; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SAPPHIRE; X RAY DIFFRACTION ANALYSIS; ZINC OXIDE; METALLIC FILMS; OPTICAL WAVEGUIDES; OXYGEN;

ATMOSPHERIC MOCVD METHOD; BUFFER LAYER; SAPPHIRE SUBSTRATES;

THIN FILMS; BUFFER LAYERS;

61.10.NZ; 78.55.ET; 81.05.DZ; 81.15.GH; C-PLANE SAPPHIRE SUBSTRATES; CRYSTAL QUALITIES; RAMAN SCATTERING SPECTRA; ROCKING CURVES;

EID: 33646242258     PISSN: 16101634     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1002/pssc.200564704     Document Type: Conference Paper

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