Edge and percolation effects on VT window in nanocrystal memories

Microelectronic Engineering

Volumn 80, Issue SUPPL., 2005, Pages 186-189

  Gusmeroli, R ^a   Spinelli, A S ^a   Compagnoni, C Monzio ^a   Ielmini, D ^a   Lacaita, A L ^a  

^a POLITECNICO DI MILANO   (Italy)

Author keywords

Edge effects; Nanocrystals; Non volatile memories; Percolative conduction

Indexed keywords

CHARGE CARRIERS; COMPUTER SIMULATION; CRYSTAL STRUCTURE; DATA ACQUISITION; ELECTRIC POTENTIAL; ELECTRON MOBILITY; ELECTRON TUNNELING; PERCOLATION (SOLID STATE);

EDGE EFFECTS; NANOCRYSTALS; NON-VOLATILE MEMORIES; PERCOLATIVE CONDUCTION;

NANOSTRUCTURED MATERIALS;

EID: 19944398163     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2005.04.066     Document Type: Conference Paper

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4. M. Saitoh IEDM Tech. Dig. 2002 181 184
5. G. Molas IEEE Trans. Nanotechnol. 3 2004 42 48