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Volumn 129, Issue 1-2 SPEC. ISS., 2006, Pages 69-74

Tunnel magnetoresistive current sensors for IC testing

Author keywords

Current sensor; IC testing; Magnetic tunnel junction; MRAM; Tunnel magnetoresistance

Indexed keywords

COST EFFECTIVENESS; ELECTRIC CURRENTS; ELECTRONIC EQUIPMENT; INTEGRATED CIRCUIT LAYOUT; MAGNETORESISTANCE; RANDOM ACCESS STORAGE;

EID: 33646229296     PISSN: 09244247     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sna.2005.09.046     Document Type: Article
Times cited : (37)

References (7)
  • 2
    • 0034171710 scopus 로고    scopus 로고
    • Iddq testing for CMOS VLSI
    • Rajsuman R. Iddq testing for CMOS VLSI. Proc. IEEE 84 4 (2000) 544-566
    • (2000) Proc. IEEE , vol.84 , Issue.4 , pp. 544-566
    • Rajsuman, R.1
  • 3
    • 0032644939 scopus 로고    scopus 로고
    • T. Calin, L. Anghel, M. Nicolaidis, Built-in current sensor for IDDQ testing in deep submicron CMOS, in: Proceedings of 17th IEEE VLSI Test Symposium (1999) 135-142.
  • 4
    • 33646268837 scopus 로고    scopus 로고
    • Sushma, http://www.fwbell.com x http://www.sensitec.com.
  • 6
    • 0032099634 scopus 로고    scopus 로고
    • Picotesla field sensor design using spin-dependent tunneling devices
    • Tondra M., Daughton J.M., Wang D., Beech R.S., Fink A., and Taylor J.A. Picotesla field sensor design using spin-dependent tunneling devices. J. Appl. Phys. 83 11 (1998) 6688-6690
    • (1998) J. Appl. Phys. , vol.83 , Issue.11 , pp. 6688-6690
    • Tondra, M.1    Daughton, J.M.2    Wang, D.3    Beech, R.S.4    Fink, A.5    Taylor, J.A.6


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.