Thermoelectric properties of polycrystalline Si1-xGex grown by die-casting vertical Bridgman growth technique

Materials Research Society Symposium Proceedings

Volumn 886, Issue , 2006, Pages 449-454

  Baba, Takashi ^a   Iida, Tsutomu ^a   Hirahara, Hisashi ^a   Itoh, Takashi ^a   Akasaka, Masayasu ^a   Takanashi, Yoshifumi ^a  

^a TOKYO UNIVERSITY OF SCIENCE   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL STRUCTURE; DIE CASTINGS; ELECTRIC CONDUCTIVITY; GERMANIUM; PHASE DIAGRAMS; PHASE TRANSITIONS; SILICON COMPOUNDS; THERMAL CONDUCTIVITY; THERMOELECTRICITY;

DIE-CASTING GROWTH PROCESS; ROOM TEMPERATURE; THERMOELECTRIC PROPERTIES; VERTICAL BRIDGMAN GROWTH TECHNIQUES;

POLYCRYSTALLINE MATERIALS;

EID: 33646175054     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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