Design and simulation of a light-activated darlington transistor based on a SiCGe/3C-SiC hetero-structure

Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors

Volumn 27, Issue 2, 2006, Pages 254-257

  Chen, Zhiming ^a   Ren, Ping ^a   Pu, Hongbin ^a  

^a XI'AN UNIVERSITY OF TECHNOLOGY   (China)

Author keywords

Darlington transistor; Hetero junction; SiC; SiCGe

Indexed keywords

COMPUTER SIMULATION; CURRENT VOLTAGE CHARACTERISTICS; DESIGN; EPITAXIAL GROWTH; GERMANIUM; HETEROJUNCTIONS; PERFORMANCE; SILICON CARBIDE; STRUCTURES (BUILT OBJECTS); SWITCHES;

ANTIELECTROMAGNETIC INTERFERENCE; LATTICE MISMATCHES; LIGHT ACTIVATED DARLINGTON TRANSISTOR; SILICON CARBIDE GERMANIUM;

PHOTOTRANSISTORS;

EID: 33646157943     PISSN: 02534177     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (9)

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