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Volumn , Issue , 2003, Pages 22-23
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Characterization of electronic transport through Si dot with Ge core using AFM conducting probe
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Author keywords
[No Author keywords available]
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Indexed keywords
GERMANIUM;
NANOTECHNOLOGY;
2 LAYER;
AFM;
CONDUCTING PROBES;
ELECTRONIC TRANSPORT;
ULTRA-THIN;
SILICON;
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EID: 84949200849
PISSN: None
EISSN: None
Source Type: Conference Proceeding
DOI: 10.1109/IMNC.2003.1268499 Document Type: Conference Paper |
Times cited : (1)
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References (5)
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