Modeling of the diffusion of implanted boron in strained Si/Si1-xGex

International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

Volumn 2002-January, Issue , 2002, Pages 221-224

  Zhu, Huilong ^a   Lee, Kam Leung ^b   Dokumaci, O ^a   Ronsheim, P ^a   Cardone, F ^b   Hegde, S ^b   Mantz, U ^a   Saunders, P ^b  

^a IBM RESEARCH   (United States)

^b IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

Annealing; Boron; Germanium silicon alloys; Heterojunction bipolar transistors; Potential energy; Semiconductor device modeling; Semiconductor process modeling; Silicon germanium; Stress; Temperature

Indexed keywords

AMORPHIZATION; ANNEALING; BICMOS TECHNOLOGY; BORON; DIFFUSION; GERMANIUM; GERMANIUM ALLOYS; HETEROJUNCTION BIPOLAR TRANSISTORS; HETEROJUNCTIONS; PILES; POTENTIAL ENERGY; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICES; SILICON ALLOYS; STRESSES; TEMPERATURE;

ANALYTIC FORMULA; GERMANIUM CLUSTERS; GERMANIUM SILICON ALLOY; MEASUREMENT DATA; PRE-AMORPHIZATION; SEGREGATION MODEL; SEMICONDUCTOR PROCESS MODELING; SILICON GERMANIUM;

SEMICONDUCTOR DEVICE MODELS;

EID: 33646108311     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/SISPAD.2002.1034557     Document Type: Conference Paper

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