In situ investigation by GISAXS and GIXD of the growth mode, strain state and shape of Ge islands during their growth on Si(0 0 1)

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 246, Issue 1, 2006, Pages 35-38

  Richard, M I ^a,b   Schulli T U ^a   Wintersberger, E ^c   Renaud, G ^a   Bauer, G ^c  

^a CEA GRENOBLE   (France)

^b EUROPEAN SYNCHROTRON RADIATION FACILITY   (France)

^c JOHANNES KEPLER UNIVERSITY LINZ   (Austria)

Author keywords

Ge; GISAXS; GIXD; Si; Strain state

Indexed keywords

DIFFRACTION; DIFFUSION; GERMANIUM; MONOLAYERS; NUCLEATION; SEMICONDUCTING SILICON; X RAY SCATTERING;

DEPOSITION TEMPERATURES; GRAZING INCIDENCE SMALL ANGLE X-RAY SCATTERING (GISAXS); GRAZING INCIDENCE X-RAY DIFFRACTION (GIXD); STRAIN STATES;

SEMICONDUCTOR QUANTUM DOTS;

EID: 33645865881     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2005.12.044     Document Type: Article

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