Electrostatic discharge effects in ultrathin gate oxide MOSFETs

IEEE Transactions on Device and Materials Reliability

Volumn 6, Issue 1, 2006, Pages 87-94

  Cester, Andrea ^a,b   Gerardin, Simone ^a,b   Tazzoli, Augusto ^a,b   Meneghesso, Gaudenzio ^a,b,c  

^a IEEE   (Italy)

^b UNIVERSITY OF PADOVA   (Italy)

^c University of Padu

Author keywords

CMOS device reliability; Electrostatic discharge (ESD); Oxide breakdown; Transmission line pulse (TLP)

Indexed keywords

CMOS DEVICE RELIABILITY; ELECTROSTATIC DISCHARGE; GATE OXIDE; OXIDE BREAKDOWN; TRANSMISSION LINE PULSE;

ELECTRIC CURRENTS; ELECTRIC DISCHARGES; MOSFET DEVICES; RELIABILITY; STRESSES; THICKNESS MEASUREMENT; TRANSMISSION LINE THEORY;

ELECTROSTATIC DEVICES;

EID: 33645809754     PISSN: 15304388     EISSN: 15304388     Source Type: Journal    
DOI: 10.1109/TDMR.2006.871413     Document Type: Article

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