Reproducibility of field failures by ESD models - Comparison of HBM, socketed CDM and non-socketed CDM

Microelectronics Reliability

Volumn 36, Issue 11-12 SPEC. ISS., 1996, Pages 1719-1722

  Brodbeck, T ^a   Bauch, H ^b   Guggenmos, X ^a   Wagner, R ^b  

^a SIEMENS AG   (Germany)

^b ROBERT BOSCH GMBH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC BREAKDOWN OF SOLIDS; ELECTRIC DISCHARGES; ELECTROSTATICS; FAILURE ANALYSIS; GATES (TRANSISTOR); SEMICONDUCTOR DEVICE MODELS;

FIELD FAILURES; GATE OXIDE DAMAGE; CHARGED DEVICE MODEL (CDM); ELECTROSTATIC DISCHARGES (ESD); FIELD FAILURE ANALYSIS; HUMAN BODY MODEL (HBM); THRESHOLD VOLTAGES;

INTEGRATED CIRCUIT TESTING;

EID: 0030273996     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/0026-2714(96)00182-5     Document Type: Article

References (4)

1. K. Verhaege et al., Proc. of the 6th ESREF Conference, pp. 117-125, 1995.
2. H.A. Gieser et al., Quality and Reliability Engineering Int., Vol. 10, pp. 341-350, 1994.
3. M. Chaine et al., Proc. of the EOS/ESD-Symposium, pp. 63-68, 1994.
4. Helling, paper accepted, Proc. of the 18th EOS/ESD Symposium, 1996.