Optical gain and luminescence of a ZnO-MgZnO quantum well

IEEE Photonics Technology Letters

Volumn 18, Issue 2, 2006, Pages 349-351

  Ahn, D ^a,b   Park, S H ^c   Park, E H ^d   Yoo, T K ^d  

^a IEEE

^b University of Seoul   (South Korea)

^c Catholic University of Daegu   (South Korea)

^d EpiValley Co Ltd   (South Korea)

Author keywords

InGaN AlGaN quantum well; Luminescence; Many body effect exciton; Non Markovian; Optical gain; ZnO MgZnO quantum well

Indexed keywords

LIGHT EMISSION; LIGHT SOURCES; LUMINESCENCE; OPTICAL GAIN; OPTICAL PROPERTIES; OPTICAL SYSTEMS; PIEZOELECTRICITY; SEMICONDUCTING ZINC COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR QUANTUM WIRES; ZINC ALLOYS; ZINC OXIDE; ZINC SULFIDE;

EXCITONIC EFFECTS; INGAN-ALGAN QUANTUM WELL; MANY-BODY EFFECT EXCITON; NON-MARKOVIAN; OPTICAL-; PIEZO-ELECTRIC EFFECTS; QUANTUM WELLS; QUANTUM-WELL STRUCTURES; SIGNIFICANT REDUCTION; WURTZITE; ZNO-MGZNO QUANTUM WELL;

SEMICONDUCTOR QUANTUM WELLS;

EID: 33645759677     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2005.861972     Document Type: Article

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