SCOPUS 정보 검색 플랫폼

Volumn 41, Issue 22, 2005, Pages 1210-1211

Direct nitridation of high-k metal oxide thin films using argon excimer sources

Author keywords

[No Author keywords available]

Indexed keywords

AMMONIA; ARGON; CAPACITANCE; HEATING; IRRADIATION; MAGNETIC LEAKAGE; NITRATION; TANTALUM COMPOUNDS; ULTRAVIOLET RADIATION; WATER;

ACCUMULATION CAPACITANCE; ARGON EXCIMER; DIRECT NITRIDATION; HIGH-K METAL OXIDE THIN FILMS; METAL OXYNITRIDE THIN FILMS;

THIN FILMS;

EID: 33645744746 PISSN: 00135194 EISSN: None Source Type: Journal
DOI: 10.1049/el:20052859 Document Type: Article

Times cited : (3)

References (9)

1
- 0032188244
- +- polysilicon gated PMOSFETs prepared by a combined remote plasma enhanced CVD/thermal oxidation process
- +-polysilicon gated PMOSFETs prepared by a combined remote plasma enhanced CVD/thermal oxidation process ', IEEE Electron Device Lett., 1998, 19, p. 367-369
- (1998) IEEE Electron Device Lett. , vol.19 , pp. 367-369
- Wu, Y.¹ Lucovsky, G.²

2
- 77957693448
- 5 und das tantaloxidnitrid TaON
- 5 und das tantaloxidnitrid TaON ', Z. Anorg. Allg. Chem., 1966, 348, p. 298-308
- (1966) Z. Anorg. Allg. Chem. , vol.348 , pp. 298-308
- Von, B.G.¹ Weidlein, J.² Strähle, J.³

3
- 0009765620
- y thin films by atomic layer deposition
- y thin films by atomic layer deposition ', Chem. Mater., 1999, 11, p. 1712-1718
- (1999) Chem. Mater. , vol.11 , pp. 1712-1718
- Ritala, M.¹

4
- 0001767393
- y gate dielectric
- y gate dielectric ', Appl. Phys. Lett., 2000, 76, p. 3630-3631
- (2000) Appl. Phys. Lett. , vol.76 , pp. 3630-3631
- Jung, H.¹

5
- 0037185129
- UV annealing of ultrathin tantalum oxide films
- Yu, J.J., Zhang, J., and Boyd, I.W.: ' UV annealing of ultrathin tantalum oxide films ', Appl. Surf. Sci., 2002, 186, p. 57-63
- (2002) Appl. Surf. Sci. , vol.186 , pp. 57-63
- Yu, J.J.¹ Zhang, J.² Boyd, I.W.³

6
- 25444469653
- Direct Si oxidation with fluorine incorporation using an argon excimer VUV source
- Yu, J.J., and Boyd, I.W.: ' Direct Si oxidation with fluorine incorporation using an argon excimer VUV source ', Phys. Status. Solidi. (A), 2005, 202, p. R98-R100
- (2005) Phys. Status. Solidi. (A) , vol.202
- Yu, J.J.¹ Boyd, I.W.²

7
- 0032516989
- Intermixing at the tantalum oxide/silicon interface in gate dielectric structures
- Alers, G.B.: et al. ' Intermixing at the tantalum oxide/silicon interface in gate dielectric structures ', Appl. Phys. Lett., 1998, 73, p. 1517-1519
- (1998) Appl. Phys. Lett. , vol.73 , pp. 1517-1519
- Alers, G.B.¹

8
- 1542531257
- Low temperature Si and SiGe oxidation through dielectric barrier discharges
- Yu, J.J., and Boyd, I.W.: ' Low temperature Si and SiGe oxidation through dielectric barrier discharges ', Thin Solid Films, 2004, 453-454, p. 63-66
- (2004) Thin Solid Films , vol.453-454 , pp. 63-66
- Yu, J.J.¹ Boyd, I.W.²

9
- 0035417524
- Photo-induced growth of dielectrics with excimer lamps
- Boyd, I.W., and Zhang, J.: ' Photo-induced growth of dielectrics with excimer lamps ', Solid-State Electron., 2001, 45, p. 1413-1431
- (2001) Solid-State Electron. , vol.45 , pp. 1413-1431
- Boyd, I.W.¹ Zhang, J.²

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.