Direct Si oxidation with fluorine incorporation using an argon excimer VUV source

Physica Status Solidi (A) Applications and Materials Science

Volumn 202, Issue 9, 2005, Pages

  Yu, J J ^a   Boyd, I W ^a  

^a UNIVERSITY COLLEGE LONDON   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

GAS PRESSURE; REACTION CHAMBERS; SI OXIDATION; SUBSTRATE HEATING;

ARGON; EXCIMER LASERS; FLUORINE; HEATING; OXIDATION; SUBSTRATES; THIN FILMS; ULTRAVIOLET RADIATION;

SILICON;

EID: 25444469653     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.200510037     Document Type: Article

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