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Volumn 55, Issue 7, 1997, Pages 4633-4638

Origin of sharp lines in photoluminescence emission from submonolayers of InAs in GaAs

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EID: 0000739347     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.55.4633     Document Type: Article
Times cited : (17)

References (15)
  • 8
    • 0029378235 scopus 로고
    • Wei Li, Zhanguo Wang, Jiben Liang, Bo Xu, Zhanping Zhu, Zhiliang Yuan and Jian Li, Appl. Phys. Lett 67, 1874 (1995).
    • (1995) Appl. Phys. Lett , vol.67 , pp. 1874
  • 13
    • 0003238020 scopus 로고
    • This value is calculated using a=ɛ(Formula presented)(Formula presented)/(Formula presented). Where (Formula presented) is the hydrogen atom Bohr radius, ɛ=12.5 is the dielectric constant of GaAs, (Formula presented)=0.(Formula presented) is the reduced effective mass of the exciton as quoted in S. B. Nam, D. C. Reynolds, C. W. Litton, R. J. Almassy, T. C. Collins and C. M. Wolfe, Phys. Rev. B 13, 761 (1976).
    • (1976) Phys. Rev. B , vol.13 , pp. 761
    • Reynolds, D.1    Litton, C.2    Almassy, R.3    Collins, T.4    Wolfe, C.5


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.