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Volumn 61, Issue 3, 2000, Pages 2073-2084

Layer perfection in ultrathin InAs quantum wells in GaAs(001)

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Indexed keywords


EID: 0000923595     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.61.2073     Document Type: Article
Times cited : (17)

References (45)
  • 20
    • 0027915671 scopus 로고
    • T. Kawai, H. Yonezu, Y. Ogasawara, D. Saito, and K. Pak, in Common Themes and Mechanisms of Epitaxial Growth, edited by P. Fuoss, J. Tsao, D.W. Kisker, A. Zangwill, and T.F. Kuech, MRS Symposia Proceedings No. 312 (Materials Research Society, Pittsburgh, 1993), p. 113.
    • (1993) MRS Symposia Proceedings , pp. 113
    • Kawai, T.1    Yonezu, H.2    Ogasawara, Y.3    Saito, D.4    Pak, K.5


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.