High-gain excitonic lasing from a single InAs monolayer in bulk GaAs

Applied Physics Letters

Volumn 72, Issue 12, 1998, Pages 1433-1435

  Goni A R ^a   Stroh, M ^a   Thomsen, C ^a   Heinrichsdorff, F ^a   Turck V ^a   Krost, A ^a   Bimberg, D ^a  

^a TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CATHODOLUMINESCENCE; EXCITONS; GAIN MEASUREMENT; MONOLAYERS; OPTICAL PUMPING; OPTICAL VARIABLES MEASUREMENT; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR LASERS; SEMICONDUCTOR QUANTUM DOTS; SEMICONDUCTOR QUANTUM WELLS;

INDIUM ARSENIDE; SINGLE MONOLAYER;

LUMINESCENCE;

EID: 0032024614     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.120586     Document Type: Article

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