Analysis of p-n junction profiles of polycrystalline silicon thin-film solar cells by eleetron-beam-induced current technique

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 45, Issue 4 A, 2006, Pages 2441-2446

  Yamazaki, Tsutomu ^a   Uraoka, Yukiharu ^a   Fuyuki, Takashi ^a  

^a NARA INSTITUTE OF SCIENCE AND TECHNOLOGY   (Japan)

Author keywords

Electron beam induced current; p n junction; Polycrystalline silicon; Preferential diffusion; Thin film solar cell

Indexed keywords

DEPOSITION; DIFFUSION IN SOLIDS; GRAIN BOUNDARIES; PHOSPHORUS; PROBABILITY; SOLAR CELLS; SUBSTRATES; THIN FILMS;

ELECTRON-BEAM-INDUCED CURRENT; P-N JUNCTION; PREFERENTIAL DIFFUSION; THIN-FILM SOLAR CELLS;

POLYSILICON;

EID: 33645663813     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.45.2441     Document Type: Article

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