Properties of p-n diodes made in polysilicon layers with intermediate grain size

Solid State Phenomena

Volumn 67, Issue , 1999, Pages 577-582

  Beaucarne, G ^a   Poortmans, J ^a   Caymax, M ^a   Nijs, J ^a,b   Mertens, R ^a,b  

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; HYDROGENATION; POLYCRYSTALLINE MATERIALS; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR JUNCTIONS; SOLAR CELLS;

POLYSILICON LAYERS;

SEMICONDUCTOR DIODES;

EID: 0032673163     PISSN: 10120394     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.4028/www.scientific.net/ssp.67-68.577     Document Type: Article

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