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Volumn 63-64, Issue , 1998, Pages 77-88
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Evaluation of p-n junction position and channel length in Si devices with resolution of a few nanometers by low-energy EBIC
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Author keywords
2D dopant distribution; Channel length; Low energy EBIC; p n junction position
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Indexed keywords
ELECTRON BEAMS;
ELECTRON IRRADIATION;
FIELD EFFECT TRANSISTORS;
INDUCED CURRENTS;
RADIATION EFFECTS;
SCHOTTKY BARRIER DIODES;
SEMICONDUCTOR DOPING;
SEMICONDUCTOR JUNCTIONS;
ELECTRON BEAM INDUCED CURRENT (EBIC) METHODS;
SILICON WAFERS;
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EID: 4243345128
PISSN: 10120394
EISSN: None
Source Type: Book Series
DOI: 10.4028/www.scientific.net/ssp.63-64.77 Document Type: Article |
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Times cited : (8)
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References (7)
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