Enhanced light extraction and spontaneous emission from textured GaN templates formed during growth by the HVPE method

Proceedings - Electrochemical Society

Volumn 6, Issue , 2004, Pages 351-357

  Cabalu, Jasper S ^a   Thomidis, Christos ^a   Moustakas, Theodore D ^a   Riyopoulos, Spilios ^b  

^a Boston University   (United States)

^b SCIENCE APPLICATIONS INTERNATIONAL CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

GAN TEMPLATES; HALIDE VAPOR-PHASE EPITAXY (HVPE) METHOD; LIGHT EXTRACTION EFFICIENCY; WAFER BONDING METHODS;

LIGHT EMITTING DIODES; LIGHT SOURCES; PHOTOLUMINESCENCE; QUANTUM EFFICIENCY; SPONTANEOUS EMISSION; SUBSTRATES; TEXTURES; ULTRAVIOLET RADIATION; VAPOR PHASE EPITAXY;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 17044365815     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)

1. E. Yablonovitch, D. M. Huang and T. J. Gmitter, Appl. Phys. Lett., 56, 2419 (1990).
2. H. Y. Ryu, J. K. Hwang, Y.J. Lee, Y. H. Lee, IEEE Journal of Selected Topics in Quantum Electronics, 8, 231 (2002).
3. R. Windish, B. Dutta, M. Kuijk, et. al., IEEE Trans. Electron Devices, 47, 1492 (2000).
4. T. Fujii, Y. Gao, R. Sharma, E. L. Hu, S. P. DenBaars, and S. Nakamura, Appl. Phys. Lett., 84, 855 (2004).
5. B. E. A. Saleh and M. C. Teich, Fundamentals of Photonics, p. 60, Wiley Interscience, New York (1991).