Enhanced light output of GaN-based near-UV light-emitting diodes by using nanopatterned indium tin oxide electrodes

Semiconductor Science and Technology

Volumn 21, Issue 5, 2006, Pages 594-597

  Hong, Hyun Gi ^a   Kim, Seok Soon ^a   Kim, Dong Yu ^a   Lee, Takhee ^a   Song, June O ^b   Cho, J H ^c   Sone, C ^c   Park, Y ^c   Seong, Tae Yeon ^d  

^a Gwangju Institute of Science and Technology (GIST)   (South Korea)

^b GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

^c Samsung Advanced Institute of Technology (SAIT)   (South Korea)

^d Korea University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRODES; LIGHT EMITTING DIODES; NANOSTRUCTURED MATERIALS; SEMICONDUCTING INDIUM COMPOUNDS; ULTRAVIOLET RADIATION;

NANOPATTERNED P-TYPE ELECTRODES; P-TYPE CONTACT LAYERS; SURFACE RELIEF GRATING TECHNIQUE;

GALLIUM NITRIDE;

EID: 33645657297     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/21/5/004     Document Type: Article

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