A 512-Mb DDR3 SDRAM prototype with C IO minimization and self-calibration techniques

IEEE Journal of Solid-State Circuits

Volumn 41, Issue 4, 2006, Pages 831-836

  Park, Churoo ^a,b   Chung, Hoeju ^a   Lee, Yun Sang ^a,b   Kim, Jaekwan ^a   Lee, Jaejun ^a,b   Chae, Moo Sung ^a,b   Jung, Dae Hee ^a,b   Choi, Sung Ho ^a,b   Seo, Seung Young ^a,b   Park, Taek Seon ^a,b   Shin, Jun Ho ^a,b   Cho, Jin Hyung ^a,b   Lee, Seunghoon ^a,b   Song, Ki Whan ^a   Kim, Kyu Hyoun ^a   Lee, Jung Bae ^a   Kim, Changhyun ^a   Cho, Soo In ^a,b  

^a SAMSUNG Electronics   (South Korea)

^b UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

Calibration; DDR3 SDRAM; Input capacitance; Per bank refresh; SCR type ESD; Signal integrity; Temperature sensor

Indexed keywords

DDR3 SDRAM; INPUT CAPACITANCE; PER-BANK REFRESH; SCR TYPE ESD; SIGNAL INTEGRITY; TEMPERATURE SENSOR;

CALIBRATION; CAPACITANCE; ELECTRIC POWER UTILIZATION; OPTIMIZATION; SENSORS; THERMAL EFFECTS;

STATIC RANDOM ACCESS STORAGE;

EID: 33645656262     PISSN: 00189200     EISSN: None     Source Type: Journal    
DOI: 10.1109/JSSC.2006.870808     Document Type: Conference Paper

References (6)

1. K. Kim et al., "A 1.4 Gb/s DLL using 2nd order charge-pump scheme with low phase/duty error for high-speed DRAM application," in IEEE Int. Solid-State Circuits Conf. (ISSCC) Dig. Tech. Papers, 2004, pp. 212-523.
2. S. Lee et al., "A 1.6 Gb/s/pin double data rate SDRAM with wave-pipelined CAS latency control," in IEEE Int. Solid-State Circuits Conf. (ISSCC) Dig. Tech. Papers, 2004, pp. 210-213.
3. H. Song et al., "A 1.2 Gb/s/pin double data rate SDRAM with on-die-termination," in IEEE Int. Solid-State Circuits Conf. (ISSCC) Dig. Tech. Papers, 2003, pp. 314-496.
4. DDR2 SDRAM Databook. Samsung Electronics, Sep. 2004, p. 56.
5. Graphic Memory Databook. Samsung Electronics, Mar. 2004, p. 236.
6. C. Park et al., "A 512 Mb, 1.6 Gbps/pin DDR3 SDRAM prototype with Ci o minimization and self-calibration techniques," in Symp. VLSI Circuits Dig. Tech. Papers, June 2005, pp. 370-373.