Analysis of capacitor breakdown mechanisms due to crystal-originated pits

IEEE Electron Device Letters

Volumn 20, Issue 10, 1999, Pages 504-506

  Ono, Toshiaki ^a,b   Rozgonyi, George ^a   Horie, Hiroshi ^b   Miyazaki, Morimasa ^b   Tsuya, Hideki ^b  

^a North Carolina State University   (United States)

^b Sumitomo Metal Industries Ltd   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPY; COMPUTER SIMULATION; CRYSTAL DEFECTS; ELECTRIC BREAKDOWN OF SOLIDS; ELECTRODES; ETCHING; MORPHOLOGY; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY;

CRYSTAL ORIGINATED DEFECT PITS (COP); FOWLER-NORDHEIM (FN) TUNNELING;

CAPACITORS;

EID: 0033328464     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.791924     Document Type: Article

References (6)

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