Characterization of thin textured tunnel oxide prepared by thermal oxidation of thin polysilicon film on silicon

IEEE Transactions on Electron Devices

Volumn 43, Issue 2, 1996, Pages 287-294

  Lin Wu, Shye ^a   De Chiao, Ming ^a,b   Lee Len, Chung ^b   Lei, Tan Fu ^a  

^a VANGUARD INTERNATIONAL SEMICONDUCTOR CORPORATION   (Taiwan)

^b NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CHARACTERIZATION; DIFFUSION; ELECTRONS; FILM PREPARATION; GRAIN BOUNDARIES; OXIDATION; OXYGEN; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; SILICA; SUBSTRATES;

ELECTRON INJECTION RATE; ELECTRON TRAPPING RATE; OPTIMUM TEXTURIZATION PROCESS; OXIDATION KINETICS; OXIDATION TEMPERATURE; THERMAL OXIDATION; THIN POLYSILICON FILM; THIN TEXTURED TUNNEL OXIDE;

THIN FILMS;

EID: 0030085461     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.481730     Document Type: Article

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