Variability in long-duration operation of silicon tip field emission devices

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 24, Issue 2, 2006, Pages 1056-1060

  Aplin, K L ^a   Kent, B J ^a   Wang, L ^a   Lockwood, H F ^b   Rouse, J ^c   Stevens, R ^a  

^a RUTHERFORD APPLETON LABORATORY   (United Kingdom)

^b Arradiance Inc   (United States)

^c Munro's Consultancy Services Ltd   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

FIELD EMISSION CURRENTS; FIELD EMITTERS; POWER SPECTRA;

COMPUTER SOFTWARE; ELECTRIC CURRENTS; ELECTRIC POTENTIAL; GATES (TRANSISTOR); SILICON;

MICROELECTRONICS;

EID: 33645512198     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2177229     Document Type: Article

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