Fabrication of active-matrix high-efficiency electron emission device and its application to high-sensitivity image sensing

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 24, Issue 2, 2006, Pages 1021-1025

  Negishi, Nobuyasu ^a   Tanaka, Ryota ^a   Nakada, Tomonari ^a   Sakemura, Kazuto ^a   Okuda, Yoshiyuki ^a   Satoh, Hideo ^a   Watanabe, Atsushi ^a   Yoshikawa, Takamasa ^a   Ogasawara, Kiyohide ^a   Nanba, Masakazu ^b   Okazaki, Saburo ^b   Tanioka, Kenkichi ^b   Egami, Norifumi ^b   Koshida, Nobuyoshi ^c  

^a PIONEER CORPORATION   (Japan)

^b NHK SCIENCE AND TECHNICAL RESEARCH LABORATORIES   (Japan)

^c TOKYO UNIVERSITY OF AGRICULTURE AND TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ARRAYS; ELECTRIC POTENTIAL; IMAGE SENSORS; IMAGING TECHNIQUES; PHOTOCONDUCTING MATERIALS;

ACTIVE-MATRIX DRIVE CONFIGURATION; HIGH-EFFICIENCY ELECTRON EMISSION DEVICE (HEED) (; HIGH-GAIN AVALANCHE RUSHING AMORPHOUS PHOTOCONDUCTOR (HARP); ULTRAHIGH SENSITIVITY;

HIGH ENERGY ELECTRON DIFFRACTION;

EID: 33645505536     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2165667     Document Type: Article

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