Characterization of an advanced high-efficiency electron emission device

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 23, Issue 2, 2005, Pages 682-686

  Negishi, Nobuyasu ^a   Nakada, Tomonari ^a   Sakemura, Kazuto ^a   Okuda, Yoshiyuki ^a   Satoh, Hideo ^a   Watanabe, Atsushi ^a   Yoshikawa, Takamasa ^a   Ogasawara, Kiyohide ^a   Koshida, Nobuyoshi ^b  

^a PIONEER CORPORATION   (Japan)

^b TOKYO UNIVERSITY OF AGRICULTURE AND TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC POTENTIAL; METAL INSULATOR TRANSITION; SEMICONDUCTOR MATERIALS; VACUUM;

ELECTRON EMISSION DEVICES; EMISSION STATES; HALF LIFE;

ELECTRON EMISSION;

EID: 31144445783     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1884119     Document Type: Conference Paper

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