Electrical behavior of modulation-and delta-doped Al x Ga 1 - X As/In y Ga1 - Y As/GaAs PHEMT structures

Russian Microelectronics

Volumn 35, Issue 2, 2006, Pages 67-73

  Galiev, G B ^a   Vasil'evskii, I S ^b   Klimov, E A ^a   Mokerov, V G ^a  

^a Institute of Ultrahigh Frequency Semiconductor Electronics   (Russian Federation)

^b MOSCOW STATE UNIVERSITY   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

DOPING (ADDITIVES); ELECTRIC PROPERTIES; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM ARSENIDE;

ELECTRICAL BEHAVIOR; PHEMT STRUCTURES; PHOTOLUMINESCENCE SPECTROSCOPY;

ALUMINUM COMPOUNDS;

EID: 33645298174     PISSN: 10637397     EISSN: None     Source Type: Journal    
DOI: 10.1134/S1063739706020016     Document Type: Article

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