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Volumn 83, Issue 2, 2006, Pages 285-288

Structural, dielectric and electromechanical study of Hf-substituted BaTiO3 thin films fabricated by CSD

Author keywords

[No Author keywords available]

Indexed keywords

CONCENTRATION (PROCESS); ELECTRIC PROPERTIES; ELECTROCHEMISTRY; HAFNIUM; PERMITTIVITY; SILICON; THIN FILMS;

ELECTROMECHANICAL STUDY; HAFNIUM SUBSTITUTION; PLATINIZED SILICON; SILICON SUBSTRATES;

BARIUM TITANATE;

EID: 33645275777 PISSN: 09478396 EISSN: 14320630 Source Type: Journal
DOI: 10.1007/s00339-006-3494-3 Document Type: Article

Times cited : (9)

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