Interaction between transition metals and point defect clusters in silicon characterized by photoluminescence

Physica B: Condensed Matter

Volumn 376-377, Issue 1, 2006, Pages 137-141

  Terashima, Koichi ^a   Horikawa, Mistuhiro ^b  

^a NEC CORPORATION   (Japan)

^b Elpida Memory Inc   (Japan)

Author keywords

Photoluminescence; Point defect clusters; Silicon; Transition metal

Indexed keywords

ANNEALING; PHOTOLUMINESCENCE; POINT DEFECTS; SILICON;

METAL ATOMS; PL INTENSITY; POINT DEFECT CLUSTERS;

TRANSITION METALS;

EID: 33645212298     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physb.2005.12.036     Document Type: Conference Paper

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