Optical characterization of heavily Sn-doped GaAs1-xSb x epilayers grown by molecular beam epitaxy on (001) GaAs substrates

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 44, Issue 1 B, 2005, Pages 705-708

  Nishino, Fumio ^a   Takei, Tatsuya ^a   Kato, Ariyuki ^a   Jinbo, Yoshio ^a   Uchitomi, Naotaka ^a  

^a NAGAOKA UNIVERSITY OF TECHNOLOGY   (Japan)

Author keywords

GaAsSb; Molecular beam epitaxy; Sn doping

Indexed keywords

ANTIMONY; CHARACTERIZATION; MOLECULAR BEAM EPITAXY; OPTICAL PROPERTIES; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DOPING; SUBSTRATES; TIN;

EPILAYERS; GAASSB; OPTICAL CHARACTERIZATION; SN DOPING;

GALLIUM COMPOUNDS;

EID: 17044430220     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.44.705     Document Type: Conference Paper

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