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Physica B: Condensed Matter

Volumn 376-377, Issue 1, 2006, Pages 735-740

Influence of gas atmosphere during growth interruption in the deposition of ZnO films by magnetron sputtering

(5) Park, T E a Kong, B H b Cho, H K b Park, D J c Lee, J Y c

a Dong A University (South Korea)

b Sungkyunkwan University (South Korea)

c Korea Advanced Institute of Science and Technology (KAIST) (South Korea)

Author keywords

Buffer layer; In situ annealing; Inert gas; Sputtering; ZnO

Indexed keywords

ANNEALING; ARGON; FILMS; HEAT TREATMENT; IN SITU COMBUSTION; INERT GASES; MAGNETRON SPUTTERING; NITROGEN; OXYGEN; REDUCTION; STRUCTURAL ANALYSIS; X RAY DIFFRACTION; ZINC OXIDE;

BUFFER LAYER; DEPOSITION OF ZNO FILMS; FULL-WIDTH AT HALF MAXIMUM (FWHM) VALUE; GAS ATMOSPHERE; GROWTH INTERRUPTION; IMPROVED EMISSION PROPERTIES; IN-SITU ANNEALING; ROCKING CURVE; TEMPERATURE ELEVATION;

GASES;

EID: 33645133409 PISSN: 09214526 EISSN: None Source Type: Journal
DOI: 10.1016/j.physb.2005.12.184 Document Type: Conference Paper

Times cited : (12)

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