-
1
-
-
0003105195
-
x, amorphous alloys: Model systems for advanced device processing
-
x, amorphous alloys: Model systems for advanced device processing. J. Non-Cryst. Solids 266, 1009 (2000).
-
(2000)
J. Non-Cryst. Solids
, vol.266
, pp. 1009
-
-
Wolfe, D.M.1
Lucovsky, G.2
-
3
-
-
0002706311
-
2/Si(100) interfaces using a twostep remote plasma-assisted oxidation-deposition process
-
2/Si(100) interfaces using a twostep remote plasma-assisted oxidation-deposition process. Appl. Phys. Lett. 60, 434 (1992).
-
(1992)
Appl. Phys. Lett.
, vol.60
, pp. 434
-
-
Yasuda, T.1
Ma, Y.2
Habermehl, S.3
Lucovsky, G.4
-
4
-
-
0000884219
-
Dose dependence of microstructural evolution in oxygen-ion-implanted silicon carbide
-
M. Ishimaru and K.E. Sickafus: Dose dependence of microstructural evolution in oxygen-ion-implanted silicon carbide. Appl. Phys. Lett. 75, 1392 (1999).
-
(1999)
Appl. Phys. Lett.
, vol.75
, pp. 1392
-
-
Ishimaru, M.1
Sickafus, K.E.2
-
5
-
-
0033746983
-
Scanning transmission electron microscopy-energy dispersive x-ray/ electron energy loss spectroscopy studies on SiC-on-insulator structures
-
M. Ishimaru, R.M. Dickerson, and K.E. Sickafus: Scanning transmission electron microscopy-energy dispersive x-ray/electron energy loss spectroscopy studies on SiC-on-insulator structures. J. Electrochem. Soc. 147, 1979 (2000).
-
(2000)
J. Electrochem. Soc.
, vol.147
, pp. 1979
-
-
Ishimaru, M.1
Dickerson, R.M.2
Sickafus, K.E.3
-
6
-
-
0031198601
-
DuoPlasmaline a linearly extended homogeneous low pressure plasma source
-
W. Petasch, E. Räuchle, H. Muegge, and K. Muegge: DuoPlasmaline a linearly extended homogeneous low pressure plasma source. Surf. Coat. Technol. 93, 112 (1997).
-
(1997)
Surf. Coat. Technol.
, vol.93
, pp. 112
-
-
Petasch, W.1
Räuchle, E.2
Muegge, H.3
Muegge, K.4
-
7
-
-
0033320109
-
Linearly extended plasma source for large-scale applications
-
M. Kaiser, K-M. Baumgärtner, A. Schulz, M. Walker, and E. Räuchle: Linearly extended plasma source for large-scale applications. Surf. Coat. Technol. 116-119, 552 (1999).
-
(1999)
Surf. Coat. Technol.
, vol.116-119
, pp. 552
-
-
Kaiser, M.1
Baumgärtner, K.-M.2
Schulz, A.3
Walker, M.4
Räuchle, E.5
-
8
-
-
0033047449
-
Optimization of TEM specimen preparation by double-sided ion beam thinning under low angles
-
A. Strecker, J. Mayer, B. Baretzky, U. Eigenthaler, T. Gemming, R. Schweindest, and M. Ruehle: Optimization of TEM specimen preparation by double-sided ion beam thinning under low angles. J. Electron Microsc. (Tokyo) 48, 235 (1999).
-
(1999)
J. Electron Microsc. (Tokyo)
, vol.48
, pp. 235
-
-
Strecker, A.1
Mayer, J.2
Baretzky, B.3
Eigenthaler, U.4
Gemming, T.5
Schweindest, R.6
Ruehle, M.7
-
10
-
-
0032723949
-
Bonding in silicates: Investigation of the Si L-2, L-3 edge by parallel electron energy-loss spectroscopy
-
L.A.J. Garvie and P.R. Buseck: Bonding in silicates: Investigation of the Si L-2, L-3 edge by parallel electron energy-loss spectroscopy. Am. Mineral. 84, 946 (1999).
-
(1999)
Am. Mineral.
, vol.84
, pp. 946
-
-
Garvie, L.A.J.1
Buseck, P.R.2
-
11
-
-
0028578928
-
Use of electron-energy-loss near-edge fine-structure in the study of minerals
-
L.A. Garvie, A.J. Craven, and R. Brydson: Use of electron-energy-loss near-edge fine-structure in the study of minerals. Am. Mineral. 79, 411 (1994).
-
(1994)
Am. Mineral.
, vol.79
, pp. 411
-
-
Garvie, L.A.1
Craven, A.J.2
Brydson, R.3
-
12
-
-
36549092644
-
Near-edge finestructure of core-shell electronic absorption edges in silicon and its refractory compounds with the use of electron-energy-loss microspectroscopy
-
W.M. Skiff, R.W. Carpenter, and S.H. Lin: Near-edge finestructure of core-shell electronic absorption edges in silicon and its refractory compounds with the use of electron-energy-loss microspectroscopy. J. Appl. Phys. 62, 2439 (1987).
-
(1987)
J. Appl. Phys.
, vol.62
, pp. 2439
-
-
Skiff, W.M.1
Carpenter, R.W.2
Lin, S.H.3
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