SCOPUS 정보 검색 플랫폼

Journal of Superconductivity and Novel Magnetism

Volumn 18, Issue 3, 2005, Pages 345-347

Effect of gaas intermediary layer thickness on the properties of (Ga,Mn) as tri-layer structures

(4) Sato, Y a Chiba, D a,b Matsukura, F a,b Ohno, H a,b

a TOHOKU UNIVERSITY (Japan)

b JAPAN SCIENCE AND TECHNOLOGY AGENCY (Japan)

Author keywords

(Ga,Mn); As; Diluted magnetic semiconductors; III V semiconductors; TMR

Indexed keywords

ARSENIC; CURRENT VOLTAGE CHARACTERISTICS; FERROMAGNETIC MATERIALS; GALLIUM; MAGNETIC PROPERTIES; MAGNETORESISTANCE; MANGANESE; SEMICONDUCTING GALLIUM ARSENIDE; THICKNESS MEASUREMENT;

(GA,MN)AS TRI-LAYER STRUCTURES; CARRIER TRANSPORT; EFFECTIVE BARRIER; TUNNEL MAGNETORESISTANCE;

MONOLAYERS;

EID: 33645012266 PISSN: 15571939 EISSN: 15571947 Source Type: Journal
DOI: 10.1007/sl0948-005-0008-z Document Type: Article

Times cited : (5)

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