Valence band barrier at (Ga,Mn)As/GaAs interfaces

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 13, Issue 2-4, 2002, Pages 521-524

  Ohno, Y ^a   Arata, I ^a   Matsukura, F ^a   Ohno, H ^a  

^a TOHOKU UNIVERSITY   (Japan)

Author keywords

Ferromagnetic semiconductor; Spin injection; Thermionic emission

Indexed keywords

BAND STRUCTURE; CURRENT VOLTAGE CHARACTERISTICS; DEGREES OF FREEDOM (MECHANICS); FERROMAGNETISM; INTERFACES (MATERIALS); MAGNETIC SEMICONDUCTORS; MOLECULAR BEAM EPITAXY; SEMICONDUCTOR DOPING; SEMICONDUCTOR JUNCTIONS; TRANSPORT PROPERTIES;

VALENCE BAND BARRIERS;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0036493073     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1386-9477(02)00185-6     Document Type: Conference Paper

References (11)