Selective undercut etching of InGaAs and InGaAsP quantum wells for improved performance of long-wavelength optoelectronic devices

Journal of Lightwave Technology

Volumn 24, Issue 3, 2006, Pages 1470-1477

  Pasquariello, Donato ^a   Björlin, E Staffan ^a   Lasaosa, Daniel ^a   Chiu, Yi Jen ^a   Piprek, Joachim ^a   Bowers, John E ^a  

^a University of California   (United States)

Author keywords

Electroabsorption modulator (EAM); Photodiode; Semiconductor optical amplifier (SOA); Undercut etching

Indexed keywords

ACIDS; ANISOTROPY; ETCHING; LIGHT AMPLIFIERS; LIGHT MODULATORS; OPTICAL WAVEGUIDES; PHOTODETECTORS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS; SOLUTIONS; WETTING;

ELECTROABSORPTION MODULATOR (EAM); MULTIQUANTUM WELLS (MQWS); SEMICONDUCTOR OPTICAL AMPLIFIER (SOA); UNDERCUT ETCHING; WAVEGUIDE AMPLIFIER PHOTODETECTORS (WAPS); WET-ETCHING SOLUTIONS;

OPTOELECTRONIC DEVICES;

EID: 33644995873     PISSN: 07338724     EISSN: None     Source Type: Journal    
DOI: 10.1109/JLT.2005.863227     Document Type: Article

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