Surface- and sidewall-damage of InP-based optoelectronic devices during reactive ion etching using CH4/H2

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 1996, Pages 115-118

  Boettner, Th ^a   Kraeutle, H ^a   Kuphal, E ^a   Miethe, K ^a   Hartnagel, H L ^a  

^a DEUTSCHE TELEKOM LABORATORIES   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; LEAKAGE CURRENTS; LOW TEMPERATURE PROPERTIES; PHOTODIODES; PHOTOLUMINESCENCE; REACTIVE ION ETCHING; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES;

ACCEPTOR PASSIVATION; CRYSTALLINE DAMAGE; HYDROGEN CHANNELING; SIDEWALL DAMAGE; SURFACE LEAKAGE CURRENTS;

OPTOELECTRONIC DEVICES;

EID: 0029697504     PISSN: 10928669     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (9)