Implications of hole vs electron transport properties for high speed Pnp heterojunction bipolar transistors

Solid-State Electronics

Volumn 43, Issue 1, 1999, Pages 73-79

  Datta, S ^a   Roenker, K P ^a   Cahay, M M ^a   Stanchina, William E ^b  

^a University of Cincinnati   (United States)

^b Hughes Aircraft Co   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0343345675     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(98)00237-8     Document Type: Article

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